Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation

Mountaga Boiro; Babou Dione; Ibrahima Toure; Adama Ndiaye; Amadou Diao

doi:doi:10.11648/j.ajmp.20221101.11

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Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation

Mountaga Boiro, Babou Dione, Ibrahima Toure, Adama Ndiaye, Amadou Diao

Published in American Journal of Modern Physics (Volume 11, Issue 1)

Received: 10 January 2022 Accepted: 4 February 2022 Published: 25 February 2022

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Abstract

In this work, a theoretical study of the effect of the magnetic field on the minority charge carrier density and the diffusion capacity of a silicon solar cell with vertical junction in series in dynamic frequency regime, is done. From the relative continuity equation of the minority charge carriers’ density we establish the boundary condition at the junction and the base medium. The expression of the density of minority carriers of charges in the base, allows us to determine the capacity of diffusion of the solar cell according to the magnetic field, the frequency of modulation, the wavelength of illumination and a junction recombination velocity. The profile of the diffusion coefficient allowed us to make a choice on the values of the magnetic field. These values of the magnetic field intensity will be fixed throughout this article. Each value of the magnetic field strength corresponds to a well-defined value of the resonance frequency. We obtained two ranges of illumination wavelengths from the minority charge carrier’ density profile. The influence of the magnetic field on the diffusion coefficient, of the density of minority charge carriers in short-circuit and open-circuit conditions and of the diffusion capacity, for a specific wavelength, is theoretically studied.

Published in	American Journal of Modern Physics (Volume 11, Issue 1)
DOI	10.11648/j.ajmp.20221101.11
Page(s)	1-6
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Vertical Junction Solar Cell, Frequency Modulation, Cut-off Frequency, Magnetic Field, Wavelength, Diffusion Capacity, Junction Recombination Velocity

References

[1]	Amadou Diao, N. Thiam, M. Zoungrana, G. Sahin, M Ndiaye, G Sissoko, (2014). Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits. World Journal of Condensed Matter Physics, 4, 84-92.
[2]	Equer, B. (1993). Energie solaires photovoltaïque, 1, Collection Ellipses.
[3]	Lago-Aurrekoetxea, R. M., Del Can Izo, C., Pou, I., & Luque, A. (2001). Fabrication Process for Thin Silicon Solar Cells. 17^th European PVSEC, Munich, 1519-1522.
[4]	Schneider, A., Gerhards, C., Huster, F., Neu, W., Spiegel, M., Fath, P., Bucher, E., Young, R. J. S., Prince, A. G., Raby, J. A., & Carollal, A. F. (2001). BSF for Thin Screen-Printed Multicrystalline Si Solar Cells. 17^th European PVSEC, Munich, 1768-1771.
[5]	Bordin, N., Kreinin, L., & Eisenberg, N. (2001). Determination of recombination parameters of bifacial silicon cells with a two layer step-liked effect distribution in the base region. Proc. 17^th European PVSEC, 1495-1498.
[6]	P. Ooshaksaraei, K. Sopian, R. Zulkifli, M. A. Alghoul, and Saleem H. Zaidi. (2013). Characterization of a Bifacial Photovoltaic Panel Integrated with External Diffuse and Semimirror Type Reflector. International Journal of Photoenergy, 1-7. doi.org/10.1155/2013/465837.
[7]	Stephen Kaye, Pasadena, and Louis Garasi. (1967). Solar cell configuration. United States Patent, 3.
[8]	G. C. Jain, S. N. Singh and R. K. Kotnala. (1983). Diffusion length determination in n+-p-p+ structure based silicon solar cells from the intensity dependence of the short-circuit current for illumination from the p+ sid. Solar Cells. 8. 239-248.
[9]	M. I. Ngom, M. S. Diouf, A. Thiam, Ould El Moujtaba, Mohamed Abderrahim and G. Sissoko. (2015). Influence of Magnetic Field on the Capacitance of a Vertical Junction Parallel Solar Cell in Static Regime, Under Multispectral Illuminatio. International Journal of Pure & Applied Sciences & Technology. 31 (2). 65-75.
[10]	K. S. Rabbani and D. S. Lamb. (1981). A quick method for the determination of bulk generation lifetime in semiconductors from pulsed MOS capacitance measurements. Solid-State Electronics. 24. 661-664.
[11]	Thiam, Nd., Diao, A., Ndiaye, M., Dieng, A., Thiam, A., Sarr, M., Maiga, A. S. and Sissoko, G. (2012). Electric Equivalent Models of Intrinsic Recombination Velocities of a Bifacial Silicon Solar Cell under Frequency Modulation and Magnetic Field Effect. Research Journal of Applied Sciences, Engineering and Technology. 4. 4646-4655.
[12]	Sater BL, Sater ND. (2003). High voltage silicon VMJ solar cells for up to 1000 suns intensities. In Conference Record of the 29^th IEEE Photovoltaic Specialists Conference, New Orleans. 1019–1022.
[13]	Pozner, R., Segev, G., Sarfaty, R., Kribus, A., Rosenwaks, Y. (2011). Vertical junction Si cells for concentrating photovoltaics. Progress in Photovoltaics Research and Applications. 20 (2). 197–208. doi: 10.1002/pip.1118.
[14]	W. V. Roosbroeck. (1953). The transport of added current carriers in a homogeneous semiconductor. Physical. Revue 91.
[15]	Seeger, K. (1973). Semiconductor Physics. 1^st edition. doi.org/10.1007/978-3-7091-4111-3.
[16]	Sze, S. M. (1981). Physics of Semiconductor Devices. John Wiley & Sons.
[17]	J. N., and G. Hasnain. (1995). Frequency dependent hole diffusion in InGaAs double heterostructures. Appl. Phys. Lett. 67 (15). 2203 – 2205.
[18]	José Furlan and Slavko Amon. (1985). Approximation of the carrier generation rate in illuminated silicon. Solid State Electronics. 28 (12). 1241 – 1243.
[19]	Th. Flohr and R. Helbig. (1989). Determination of minority-carrier lifetime and surface recombination velocity by Optical-Beam-Induced-Current measurements at different light wavelengths.. J. Appl. Phys. 66 (7). 3060 – 3065.
[20]	Madougou, S., Made, F., Boukary, M. S., & Sissoko. (2007). Recombination parameters determination by using Internal Quantum Efficiency (IQE) data of bifacial silicon solar cells. Advanced Materials Research. 18-19. 313-324.
[21]	G. Sissoko, S. Sivoththanam, M. Rodot, P. Mialhe “Constant illumination-induced open circuit voltage decay (CIOCVD) method, as applied to high efficiency Si Solar cells for bulk and back surface characterization” 11^th European Photovoltaic Solar Energy Conference and Exhibition, poster 1B, 12-16 October, 1992, pp. 352-54, Montreux, Switzerland.
[22]	H L Diallo, A. Wereme, A S Maïga et G. Sissoko. (2008). Nouvelle approche des vitesses de recombinaison de jonction et de surface arrière dans une étude de modélisation 3D d'une cellule solaire en silicium polycristallin. Eur. Phys. J. Appl. Phys. 42. 203–211.
[23]	C. Kittel. (1972). Introduction à la Physique de l’Etat Solide. 284-285.
[24]	M. Cardona. (1969). Modulation Spectroscopy. Solid State Physics.
[25]	A. Thiam, M. Zoungrana, H. Ly Diallo, A. Diao, N. Thiam, S. Gueye, M. M. Deme, M. Sarr and G. Sissoko. (2013). Influence of Incident Illumination Angle on Capacitance of a Silicon Solar Cell under Frequency Modulation. Research Journal of Applied Sciences, Engineering and Technology. 4. 1123-1128.
[26]	S. Mbodji, M. Mbow, F. I. Barro and G. Sissoko. (2010). A 3d model for thickness and diffusion capacitance of emitter-base junction in a bifacial polycrystalline solar cell. Global journal of pure and applied sciences. 16 (4). 469- 477.
[27]	A. Jakubowski. (1981). Graphic method of substrate doping determination from C-V characteristics of MIS capacitors. Solid-state electronics. 24 (10). 985-987.
[28]	G. Sahin, M. Dieng, M. A. Ould El Moujtaba, M. I. Ngom, A. Thiam and G. Sissoko. (2015). Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illuminatio. Journal of Applied Mathematics and Physics. 3. 1536-1543.
[29]	F. I. Barro, M. Ndiaye, M. Deme, S. Mbodji, E. Ba and G. Sissoko. (2008). Influence of grains size and grains boundaries recombination on the space-charge layer thickness z of emitter-base junction’s n+-p-p+ solar cell. Proceedings of the 23^rd European Photovaltaic Solar Energy Conference and exhibition. 608-611.

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APA Style

Mountaga Boiro, Babou Dione, Ibrahima Toure, Adama Ndiaye, Amadou Diao. (2022). Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation. American Journal of Modern Physics, 11(1), 1-6. https://doi.org/10.11648/j.ajmp.20221101.11

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ACS Style

Mountaga Boiro; Babou Dione; Ibrahima Toure; Adama Ndiaye; Amadou Diao. Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation. Am. J. Mod. Phys. 2022, 11(1), 1-6. doi: 10.11648/j.ajmp.20221101.11

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AMA Style

Mountaga Boiro, Babou Dione, Ibrahima Toure, Adama Ndiaye, Amadou Diao. Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation. Am J Mod Phys. 2022;11(1):1-6. doi: 10.11648/j.ajmp.20221101.11

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@article{10.11648/j.ajmp.20221101.11,
  author = {Mountaga Boiro and Babou Dione and Ibrahima Toure and Adama Ndiaye and Amadou Diao},
  title = {Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation},
  journal = {American Journal of Modern Physics},
  volume = {11},
  number = {1},
  pages = {1-6},
  doi = {10.11648/j.ajmp.20221101.11},
  url = {https://doi.org/10.11648/j.ajmp.20221101.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20221101.11},
  abstract = {In this work, a theoretical study of the effect of the magnetic field on the minority charge carrier density and the diffusion capacity of a silicon solar cell with vertical junction in series in dynamic frequency regime, is done. From the relative continuity equation of the minority charge carriers’ density we establish the boundary condition at the junction and the base medium. The expression of the density of minority carriers of charges in the base, allows us to determine the capacity of diffusion of the solar cell according to the magnetic field, the frequency of modulation, the wavelength of illumination and a junction recombination velocity. The profile of the diffusion coefficient allowed us to make a choice on the values of the magnetic field. These values of the magnetic field intensity will be fixed throughout this article. Each value of the magnetic field strength corresponds to a well-defined value of the resonance frequency. We obtained two ranges of illumination wavelengths from the minority charge carrier’ density profile. The influence of the magnetic field on the diffusion coefficient, of the density of minority charge carriers in short-circuit and open-circuit conditions and of the diffusion capacity, for a specific wavelength, is theoretically studied.},
 year = {2022}
}

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TY  - JOUR
T1  - Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation
AU  - Mountaga Boiro
AU  - Babou Dione
AU  - Ibrahima Toure
AU  - Adama Ndiaye
AU  - Amadou Diao
Y1  - 2022/02/25
PY  - 2022
N1  - https://doi.org/10.11648/j.ajmp.20221101.11
DO  - 10.11648/j.ajmp.20221101.11
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 1
EP  - 6
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20221101.11
AB  - In this work, a theoretical study of the effect of the magnetic field on the minority charge carrier density and the diffusion capacity of a silicon solar cell with vertical junction in series in dynamic frequency regime, is done. From the relative continuity equation of the minority charge carriers’ density we establish the boundary condition at the junction and the base medium. The expression of the density of minority carriers of charges in the base, allows us to determine the capacity of diffusion of the solar cell according to the magnetic field, the frequency of modulation, the wavelength of illumination and a junction recombination velocity. The profile of the diffusion coefficient allowed us to make a choice on the values of the magnetic field. These values of the magnetic field intensity will be fixed throughout this article. Each value of the magnetic field strength corresponds to a well-defined value of the resonance frequency. We obtained two ranges of illumination wavelengths from the minority charge carrier’ density profile. The influence of the magnetic field on the diffusion coefficient, of the density of minority charge carriers in short-circuit and open-circuit conditions and of the diffusion capacity, for a specific wavelength, is theoretically studied.
VL  - 11
IS  - 1
ER  -

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Author Information

Mountaga Boiro

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
Babou Dione

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
Ibrahima Toure

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
Adama Ndiaye

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
Amadou Diao

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal

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APA Style

Mountaga Boiro, Babou Dione, Ibrahima Toure, Adama Ndiaye, Amadou Diao. (2022). Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation. American Journal of Modern Physics, 11(1), 1-6. https://doi.org/10.11648/j.ajmp.20221101.11

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ACS Style

Mountaga Boiro; Babou Dione; Ibrahima Toure; Adama Ndiaye; Amadou Diao. Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation. Am. J. Mod. Phys. 2022, 11(1), 1-6. doi: 10.11648/j.ajmp.20221101.11

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AMA Style

Mountaga Boiro, Babou Dione, Ibrahima Toure, Adama Ndiaye, Amadou Diao. Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation. Am J Mod Phys. 2022;11(1):1-6. doi: 10.11648/j.ajmp.20221101.11

Copy | Download

@article{10.11648/j.ajmp.20221101.11,
  author = {Mountaga Boiro and Babou Dione and Ibrahima Toure and Adama Ndiaye and Amadou Diao},
  title = {Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation},
  journal = {American Journal of Modern Physics},
  volume = {11},
  number = {1},
  pages = {1-6},
  doi = {10.11648/j.ajmp.20221101.11},
  url = {https://doi.org/10.11648/j.ajmp.20221101.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20221101.11},
  abstract = {In this work, a theoretical study of the effect of the magnetic field on the minority charge carrier density and the diffusion capacity of a silicon solar cell with vertical junction in series in dynamic frequency regime, is done. From the relative continuity equation of the minority charge carriers’ density we establish the boundary condition at the junction and the base medium. The expression of the density of minority carriers of charges in the base, allows us to determine the capacity of diffusion of the solar cell according to the magnetic field, the frequency of modulation, the wavelength of illumination and a junction recombination velocity. The profile of the diffusion coefficient allowed us to make a choice on the values of the magnetic field. These values of the magnetic field intensity will be fixed throughout this article. Each value of the magnetic field strength corresponds to a well-defined value of the resonance frequency. We obtained two ranges of illumination wavelengths from the minority charge carrier’ density profile. The influence of the magnetic field on the diffusion coefficient, of the density of minority charge carriers in short-circuit and open-circuit conditions and of the diffusion capacity, for a specific wavelength, is theoretically studied.},
 year = {2022}
}

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TY  - JOUR
T1  - Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation
AU  - Mountaga Boiro
AU  - Babou Dione
AU  - Ibrahima Toure
AU  - Adama Ndiaye
AU  - Amadou Diao
Y1  - 2022/02/25
PY  - 2022
N1  - https://doi.org/10.11648/j.ajmp.20221101.11
DO  - 10.11648/j.ajmp.20221101.11
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 1
EP  - 6
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20221101.11
AB  - In this work, a theoretical study of the effect of the magnetic field on the minority charge carrier density and the diffusion capacity of a silicon solar cell with vertical junction in series in dynamic frequency regime, is done. From the relative continuity equation of the minority charge carriers’ density we establish the boundary condition at the junction and the base medium. The expression of the density of minority carriers of charges in the base, allows us to determine the capacity of diffusion of the solar cell according to the magnetic field, the frequency of modulation, the wavelength of illumination and a junction recombination velocity. The profile of the diffusion coefficient allowed us to make a choice on the values of the magnetic field. These values of the magnetic field intensity will be fixed throughout this article. Each value of the magnetic field strength corresponds to a well-defined value of the resonance frequency. We obtained two ranges of illumination wavelengths from the minority charge carrier’ density profile. The influence of the magnetic field on the diffusion coefficient, of the density of minority charge carriers in short-circuit and open-circuit conditions and of the diffusion capacity, for a specific wavelength, is theoretically studied.
VL  - 11
IS  - 1
ER  -

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