Applications of Electron Beam-induced Current at p-n Junction in InSb Devices

Xiangle Sun; Haichuan Yin; Xuegong Yu; Qian Sun; Xuqian Bai

doi:doi:10.11648/j.ajmp.20221103.11

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Applications of Electron Beam-induced Current at p-n Junction in InSb Devices

Xiangle Sun, Haichuan Yin, Xuegong Yu, Qian Sun, Xuqian Bai

Published in American Journal of Modern Physics (Volume 11, Issue 3)

Received: 28 January 2022 Accepted: 16 February 2022 Published: 7 May 2022

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Abstract

Being able to visually “see” a p-n junction in a semiconductor is advantageous to the design and fabrication of semiconductor devices. Electron beam-induced current (EBIC) was employed in this study to observe the p-n junction in InSb devices, and both Schottky and p-n junctions were observed through EBIC signal distribution. The temperature dependence of Cr-InSb (chromium-indium antimonide) Schottky junction was discovered unexpectedly. When Schottky junction’s temperature decrease, Schottky junction itself will have a new space charge region. This new space charge region is out of Schottky junction itself. Both the new space charge region and Schottky junction’s space charge region have same character. The new space charge region will enlarge with temperature decrease. This new space charge region is called Schottky response zone. For a InSb device which uses Cr as the Ohmic contact material, the Schottky junction was formed at the Cr-InSb interface. The Schottky response zone extends to 47μm at 80K. The space charge region of the p-n junction fabricated using ion-beam implantation in the InSb device has an asymmetrical spatial distribution. The aforementioned region on the n-type side is thinner and has larger charge density than that on the p-type side. As one of the most useful analytical methods, EBIC offers the advantage of a microscopic and perspective view for the observation and analysis of semiconductor devices without damaging the devices themselves.

Published in	American Journal of Modern Physics (Volume 11, Issue 3)
DOI	10.11648/j.ajmp.20221103.11
Page(s)	52-59
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Electron Beam-induced Current, Schottky Junction, p-n Junction, InSb Device

References

[1]	YANG Deren. A Test and Analysis on Semiconductor Materials [M]. Beijing: Science Press, 2010.
[2]	CHEN Boliang, ZHANG Yueqing, FANG Xiaoming, et al. Determination of hole diffusion length in n-InSb at 80K [J/OL]. Proceedings of SPIE, 2001, 4369: https://doi.org/10.1117/12.445309.
[3]	FAN Dingxun, Neelu Kang, Sepideh Gorji Ghalamestani. Schottky barrier and contact resistance of InSb nanowire field-effect transistors [J]. Nanotechnology, 2016, 27: 275204.
[4]	Hardingham C. A novel, non-destructive, technique using EBIC to determine diffusion length in GaAs solar cells [C]//Proc. of 25thPVSC, 1996: 231-234.
[5]	Higuchi H, Tamura H. Measurement of the lifetime of minority carriers in semiconductors with a scanning electron microscope [J]. Japanese Journal of Applied Physics, 1965 (4): 316-317.
[6]	Berz F, Kuiken H K. Theory of life time measurements with the scanning electron microscope: steady state [J]. Solid-state Electronics, 1976, 19: 437-445.
[7]	Donolato C, Kittler M. Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced current [J]. Journal of Applied Physics, 1988, 63 (5): 1569-1579.
[8]	Cathodo luminescence at p-n junction in GaAs [J]. Journal of Applied Physics, 1965, 36 (4): 1387-1389.
[9]	Miyazaki E, Miyaji K. Enhancement of reverse current in semiconductor diodes by electron bombardment [J]. Japanese Journal of Applied Physics, 1965 (2): 129-130.
[10]	Dereniak E L, Boreman G D. Infrared Detectors and Systems [M]. Wiley Interscience Publication, 1996: 439-452.

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APA Style

Xiangle Sun, Haichuan Yin, Xuegong Yu, Qian Sun, Xuqian Bai. (2022). Applications of Electron Beam-induced Current at p-n Junction in InSb Devices. American Journal of Modern Physics, 11(3), 52-59. https://doi.org/10.11648/j.ajmp.20221103.11

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ACS Style

Xiangle Sun; Haichuan Yin; Xuegong Yu; Qian Sun; Xuqian Bai. Applications of Electron Beam-induced Current at p-n Junction in InSb Devices. Am. J. Mod. Phys. 2022, 11(3), 52-59. doi: 10.11648/j.ajmp.20221103.11

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AMA Style

Xiangle Sun, Haichuan Yin, Xuegong Yu, Qian Sun, Xuqian Bai. Applications of Electron Beam-induced Current at p-n Junction in InSb Devices. Am J Mod Phys. 2022;11(3):52-59. doi: 10.11648/j.ajmp.20221103.11

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@article{10.11648/j.ajmp.20221103.11,
  author = {Xiangle Sun and Haichuan Yin and Xuegong Yu and Qian Sun and Xuqian Bai},
  title = {Applications of Electron Beam-induced Current at p-n Junction in InSb Devices},
  journal = {American Journal of Modern Physics},
  volume = {11},
  number = {3},
  pages = {52-59},
  doi = {10.11648/j.ajmp.20221103.11},
  url = {https://doi.org/10.11648/j.ajmp.20221103.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20221103.11},
  abstract = {Being able to visually “see” a p-n junction in a semiconductor is advantageous to the design and fabrication of semiconductor devices. Electron beam-induced current (EBIC) was employed in this study to observe the p-n junction in InSb devices, and both Schottky and p-n junctions were observed through EBIC signal distribution. The temperature dependence of Cr-InSb (chromium-indium antimonide) Schottky junction was discovered unexpectedly. When Schottky junction’s temperature decrease, Schottky junction itself will have a new space charge region. This new space charge region is out of Schottky junction itself. Both the new space charge region and Schottky junction’s space charge region have same character. The new space charge region will enlarge with temperature decrease. This new space charge region is called Schottky response zone. For a InSb device which uses Cr as the Ohmic contact material, the Schottky junction was formed at the Cr-InSb interface. The Schottky response zone extends to 47μm at 80K. The space charge region of the p-n junction fabricated using ion-beam implantation in the InSb device has an asymmetrical spatial distribution. The aforementioned region on the n-type side is thinner and has larger charge density than that on the p-type side. As one of the most useful analytical methods, EBIC offers the advantage of a microscopic and perspective view for the observation and analysis of semiconductor devices without damaging the devices themselves.},
 year = {2022}
}

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TY - JOUR
T1 - Applications of Electron Beam-induced Current at p-n Junction in InSb Devices
AU - Xiangle Sun
AU - Haichuan Yin
AU - Xuegong Yu
AU - Qian Sun
AU - Xuqian Bai
Y1 - 2022/05/07
PY - 2022
N1 - https://doi.org/10.11648/j.ajmp.20221103.11
DO - 10.11648/j.ajmp.20221103.11
T2 - American Journal of Modern Physics
JF - American Journal of Modern Physics
JO - American Journal of Modern Physics
SP - 52
EP - 59
PB - Science Publishing Group
SN - 2326-8891
UR - https://doi.org/10.11648/j.ajmp.20221103.11
AB - Being able to visually “see” a p-n junction in a semiconductor is advantageous to the design and fabrication of semiconductor devices. Electron beam-induced current (EBIC) was employed in this study to observe the p-n junction in InSb devices, and both Schottky and p-n junctions were observed through EBIC signal distribution. The temperature dependence of Cr-InSb (chromium-indium antimonide) Schottky junction was discovered unexpectedly. When Schottky junction’s temperature decrease, Schottky junction itself will have a new space charge region. This new space charge region is out of Schottky junction itself. Both the new space charge region and Schottky junction’s space charge region have same character. The new space charge region will enlarge with temperature decrease. This new space charge region is called Schottky response zone. For a InSb device which uses Cr as the Ohmic contact material, the Schottky junction was formed at the Cr-InSb interface. The Schottky response zone extends to 47μm at 80K. The space charge region of the p-n junction fabricated using ion-beam implantation in the InSb device has an asymmetrical spatial distribution. The aforementioned region on the n-type side is thinner and has larger charge density than that on the p-type side. As one of the most useful analytical methods, EBIC offers the advantage of a microscopic and perspective view for the observation and analysis of semiconductor devices without damaging the devices themselves.
VL - 11
IS - 3
ER -

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Author Information

Xiangle Sun

Yunnan Light and Textile Vocational College, Kunming, China
Haichuan Yin

Yunnan Light and Textile Vocational College, Kunming, China
Xuegong Yu

State Key Lab. of Si Materials, Zhejiang University, Hangzhou, China
Qian Sun

Yunnan University of Business Management, Kunming, China
Xuqian Bai

Yunnan Light and Textile Vocational College, Kunming, China

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Plain Text BibTeX RIS

APA Style

Xiangle Sun, Haichuan Yin, Xuegong Yu, Qian Sun, Xuqian Bai. (2022). Applications of Electron Beam-induced Current at p-n Junction in InSb Devices. American Journal of Modern Physics, 11(3), 52-59. https://doi.org/10.11648/j.ajmp.20221103.11

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ACS Style

Xiangle Sun; Haichuan Yin; Xuegong Yu; Qian Sun; Xuqian Bai. Applications of Electron Beam-induced Current at p-n Junction in InSb Devices. Am. J. Mod. Phys. 2022, 11(3), 52-59. doi: 10.11648/j.ajmp.20221103.11

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AMA Style

Xiangle Sun, Haichuan Yin, Xuegong Yu, Qian Sun, Xuqian Bai. Applications of Electron Beam-induced Current at p-n Junction in InSb Devices. Am J Mod Phys. 2022;11(3):52-59. doi: 10.11648/j.ajmp.20221103.11

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@article{10.11648/j.ajmp.20221103.11,
  author = {Xiangle Sun and Haichuan Yin and Xuegong Yu and Qian Sun and Xuqian Bai},
  title = {Applications of Electron Beam-induced Current at p-n Junction in InSb Devices},
  journal = {American Journal of Modern Physics},
  volume = {11},
  number = {3},
  pages = {52-59},
  doi = {10.11648/j.ajmp.20221103.11},
  url = {https://doi.org/10.11648/j.ajmp.20221103.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20221103.11},
  abstract = {Being able to visually “see” a p-n junction in a semiconductor is advantageous to the design and fabrication of semiconductor devices. Electron beam-induced current (EBIC) was employed in this study to observe the p-n junction in InSb devices, and both Schottky and p-n junctions were observed through EBIC signal distribution. The temperature dependence of Cr-InSb (chromium-indium antimonide) Schottky junction was discovered unexpectedly. When Schottky junction’s temperature decrease, Schottky junction itself will have a new space charge region. This new space charge region is out of Schottky junction itself. Both the new space charge region and Schottky junction’s space charge region have same character. The new space charge region will enlarge with temperature decrease. This new space charge region is called Schottky response zone. For a InSb device which uses Cr as the Ohmic contact material, the Schottky junction was formed at the Cr-InSb interface. The Schottky response zone extends to 47μm at 80K. The space charge region of the p-n junction fabricated using ion-beam implantation in the InSb device has an asymmetrical spatial distribution. The aforementioned region on the n-type side is thinner and has larger charge density than that on the p-type side. As one of the most useful analytical methods, EBIC offers the advantage of a microscopic and perspective view for the observation and analysis of semiconductor devices without damaging the devices themselves.},
 year = {2022}
}

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