Volume 7, Issue 4, July 2018, Page: 136-165
Effects of Donor Size and Heavy Doping on Optical, Electrical and Thermoelectric Properties of Various Degenerate Donor-Silicon Systems at Low Temperatures
Huynh Van Cong, Department of Physics, Laboratory of Mathematics and Physics, University of Perpignan, Perpignan, France
Received: Jul. 1, 2018;       Accepted: Jul. 13, 2018;       Published: Aug. 8, 2018
DOI: 10.11648/j.ajmp.20180704.13      View  652      Downloads  61
Abstract
In various degenerate donor-silicon systems, taking into account the effects of donor size and heavy doping and using an effective autocorrelation function for the potential fluctuations expressed in terms of the Heisenberg uncertainty relation and also an expression for the Gaussian average of , a ≥ 1 being the kinetic energy of the electron, calculated by the Kane integration method (KIM), we investigated the density of states, the optical absorption coefficient and the electrical conductivity, noting that this average expression calculated by the KIM was found to be equivalent to that obtained by the Feynman path-integral method. Then, those results were expressed in terms of for total electron energy , vanished at the conduction-band edge: , and for exhibited their exponential tails, going to zero as , and presenting the maxima, in good accordance with an asymptotic form for exponential conduction-band tail obtained by Halperin and Lax, using the minimum counting methods. Further, in degenerate d-Si systems at low temperatures, using an expression for the average of , p ≥ 3/2, calculated using the Fermi-Dirac distribution function, we determined the mobility, electrical conductivity, resistivity, Hall factor, Hall coefficient, Hall mobility, thermal conductivity, diffusion coefficient, absolute thermoelectric power, Thomson coefficient, Peltier coefficient, Seebeck thermoelectric potential, and finally dimensionless figure of merit, which were also compared with experimental and theoretical results, suggesting a satisfactory description given for our obtained results.
Keywords
Donor Size, Heavy Doping, Electrical Conductivity, Hall Effect, Diffusion Coefficient
To cite this article
Huynh Van Cong, Effects of Donor Size and Heavy Doping on Optical, Electrical and Thermoelectric Properties of Various Degenerate Donor-Silicon Systems at Low Temperatures, American Journal of Modern Physics. Vol. 7, No. 4, 2018, pp. 136-165. doi: 10.11648/j.ajmp.20180704.13
Copyright
Copyright © 2018 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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